EV1HMC345ALP3
Analog Devices Inc.The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a positive control voltage of 0/+5V, and requires a fixed bias of +5V.* Blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency.APPLICATIONSThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz
EV1HMC3716LP4
Analog Devices Inc.The HMC3716LP4E is a digital phase frequency detector which operates from 10 to 1300MHz. It is intended for usein low phase noise synthesizer applications.The combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizerswith wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunctionwith a differential loop amplifier, the HMC3716LP4E generates output voltages that can be used to phase lock a VCOto a reference oscillator.The device is packaged in a 24-pin, 4 x 4mm leadless QFN surface mount package with an exposed ground paddlefor improved RF and thermal performance.Applications Point-to-point radios Satellite communication systems Military applications Sonet clock generation
EV1HMC539ALP3
Analog Devices Inc.The HMC539ALP3/539ALP3E is a broadband5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable for a wide variety of RF and IFapplications. Covering DC to 4 GHz, the insertion loss is less than 0.7 dB typical. The attenuatorbit values are 0.25 (LSB), 0.5, 1, 2, and 4 dB for atotal attenuation of 7.75 dB. Attenuation accuracy isexcellent at ? 0.05 dB typical step error. The attenu-ator also features a high IIP3 of +62 dBm. Five TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +3V to +5V is required.Applications Cellular infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio and VSAT Test equipment and sensors
EV1HMC540SLP3
Analog Devices Inc.The HMC540SLP3E is a broadband 4-bit Silicon IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering 0.1 to 8 GHz, the insertion loss is less than 1 dB typical. The attenuator bit values are 1 (LSB), 2, 4 and 8 dB for a total attenuation of 15 dB. Attenuation accuracy is excellent at ? 0.2 dB typical step error. The attenuator also features a IIP3 of +56dBm. Four TTL/CMOS control inputs are used to select each attenuation state. It can operate with a single Vdd ranging from +3.3V to 5V.APPLICATIONS Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Test Equipment and Sensors
EV1HMC574AMS8
Analog Devices Inc.The HMC574AMS8E is low-cost SPDT switchin 8-lead MSOP packages for use in transmit/receive applications which requires very lowdistortion at high incident power levels. Thedevice can control signals from DC to 3 GHz andis especially suited for Cellular/3G infrastructure,WiMAX and WiBro applications with only 0.3 dBtypical insertion loss. The design provides 5 wattpower handling performance and +63 dBm thirdorder intercept at +8 Volt bias. RF1 and RF2 arereflective shorts when ?Off.?Applications Cellular/3G infrastructure Private mobile radio handsets WLAN, WiMAX and WiBro Automotive telematics Test equipment
EV1HMC618ALP3
Analog Devices Inc.The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).Applications Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radio
EV1HMC641ALC4
Analog Devices Inc.The HMC641ALC4 is a broadband non-reflective GaAs pHEMT SP4T switch in a compact 4x4 mm ceramic package. Covering DC to 20 GHz, this switch offers high isolation, low insertion loss and on-chip termination of isolated ports. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines from four to two. The HMC641ALC4 is controlled with 0/ -5V logic, exhibits fast switching speed and consumes much less DC current than pin diode based solutions.APPLICATIONS Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors
EV1HMC7357LP5G
Analog Devices Inc.The HMC7357 is a three-stage GaAs pHEMT MMIC Medium Power Amplifier that operates between 5.5 and 8.5 GHz. The amplifier provides 29 dB of gain and +35 dBm of saturated output power at 34% PAE from a +8V supply. With an excellent Output IP3 of +41.5 dBm, the HMC7357 is ideal for linear applications such as high capacity point-to-point and point-to-multi-point radios or VSAT/SATCOM applications demanding +35 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms for ease of use. The HMC7357 is packaged in a leadless 5x5 mm plastic surface mount package and is compatible with surface mount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM
EV1HMC7885FH18
Analog Devices Inc.The HMC7885 is a 32 W gallium nitride (GaN), monolithicmicrowave integrated circuit (MMIC) power amplifier (PA)module that operates between 2 GHz and 6 GHz, and is providedin an 18-lead hermetically sealed module. The amplifier typicallyprovides 21 dB of small signal gain and 45 dBm of saturated radiofrequency (RF) output power. The amplifier draws 2200 mA ofquiescent current (IDD) from a 28 V dc supply. The RF input andoutput are dc blocked and matched to 50 ? for ease of use.Applications Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars
EV1HMC797APM5
Analog Devices Inc.The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os are internally matched to 50 ? facilitating integration into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.Applications Test Instrumentation Military & Space Fiber Optics
EV1HMC802ALP3
Analog Devices Inc.The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ?0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN,?WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure
EV1HMC8205BF10
Analog Devices Inc.The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment
EV1HMC832ALP6G
Analog Devices Inc.The HMC832A is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz and an integrated VCO output divider (divide by 1, 2, 4, 6, ? 62) that enables the HMC832A to generate continuous frequencies from 25 MHz to 3000 MHz. The integrated phase detector (PD) and ?-? modulator, capable of operating at up to 100 MHz, permit wider loop bandwidths and faster frequency tuning with excellent spectral performance.Industry leading phase noise and spurious performance, across all frequencies, enable the HMC832A to minimize blocker effects, and to improve receiver sensitivity and transmitter spectral purity. A low noise floor (?160 dBc/Hz) eliminates any contribution to modulator/mixer noise floor in transmitter applications.The HMC832A is footprint compatible to the market leading HMC830 PLL with an integrated VCO. It features 3.3 V supply and an innovative programmable performance technology that enables the HMC832A to tailor current consumption and corresponding noise floor performance to individual applications by selecting either a low current consumption mode or a high performance mode for an improved noise floor performance.Additional features of the HMC832A include 12 dB of RF output gain control in 1 dB steps; an output mute function to automatically mute the output during frequency changes when the device is not locked; selectable output return loss; programmable differential or single-ended outputs, with the ability to select either output in single-ended mode; and a ?-? modulator exact frequency mode that enables users to generate output frequencies with 0 Hz frequency error; and a register configurable 3.3 V or 1.8 V serial port interface (SPI).Applications Cellular infrastructure Microwave radios WiMax, WiFi Communications test equipment CATV equipment DDS replacement Military Tunable reference sources for spurious-free performance
EV1HMC8415LP6G
Analog Devices Inc.The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.APPLICATIONS Weather radars Marine radars Military radars
EV1HMC8500PM5
Analog Devices Inc.The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification
EV1HMC881ALP5
Analog Devices Inc.The HMC881A is a monolithic microwave integrated circuit (MMIC) low-pass filter that features a user-selectable cutoff frequency. The cutoff frequency can be varied from 2.4 GHz to 4 GHz by applying a single analog tuning voltage between 0 V and 14 V. This low-pass filter provides a low 3 dB insertion loss, 16.5 dB return loss, and 1.35 ? f3dB stopband attenuation of >20 dB. This tunable filter can be used as a much smaller alternative to physically large switched filter banks and cavity tuned filters. The HMC881A has excellent microphonics due to the monolithic design, and provides a dynamically adjustable solution in advanced communications applications. The low-pass tunable filter is packaged in a RoHS compliant 5 mm ? 5 mm LFCSP package.Applications Testing and measurement equipment Military radar and electronic warfare/electronic countermeasures (ECMs) Satellite communication and space Industrial and medical equipment
EV1HMC908ALC5
Analog Devices Inc.The HMC908A is a compact, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), inphase/quadrature (I/Q) downconverter in a leadless, RoHS compliant ceramic leadless chip carrier. This device provides a small signal conversion gain of 11 dB with a noise figure of 2 dB and 25 dB of image rejection at 100 MHz. The HMC908A utilizes a low noise amplifier (LNA) followed by an image rejection mixer that is driven by a local oscillator (LO) buffer amplifier. The image rejection mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC908A is a much smaller alternative to hybrid style image rejection mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.Applications Point to point radios Point to multipoint radios and very small aperture terminals (VSATs) Test equipment and sensors Military end use
EV1HMC951ALP4
Analog Devices Inc.The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors
EV1HMC973ALP3
Analog Devices Inc.The HMC973ALP3E is an absorptive Voltage VariableAttenuator (VVA) which operates from 0.5 to 5 GHzand is ideal in designs where an analog DC controlsignal must be used to control RF signal levels overa 26 dB amplitude range. It features a shunt-typeattenuator controlled by an analog voltage, Vctrl.The HMC973ALP3E is an unidirectional device withoptimum linearity performance achieved when the RFinput signal is applied to the RFIN package lead. TheHMC973ALP3E is housed in a RoHS compliant 3x3mm QFN leadless package.Applications Point-to-point radio Cellular/3G & WiMAX/4G infrastructure Test instrumentation Microwave sensors? Military, ECM & radar
System-on-Module (SOM) Board to Evaluate the 1 GHz ADSP-2156x SHARC+® Family of Audio Processors
Analog Devices Inc.The EV-21569-SOM with low-cost evaluation and rapid prototyping of the ADSP-2156× Family (ADSP-21562/21563/21565/21566/21567/21569) of SHARC+ audio processors. It features the processor, memory, and power portions of the design and provides an easy-to-use plug-n-play reference design with all the key interfaces made available on three connectors for marrying to either the EV-SOMCRR-EZKIT carrier board or a custom carrier board. The EV-21569-SOM and EV-SOMCRR-EZKIT boards may be purchased as a bundle (EV-21569-EZKIT), providing fast and easy evaluation of the processor core and system peripherals/interfaces.
The EV-21569-SOM module requires the CrossCore® Embedded Studio (CCES) development tools to enable developers to achieve faster time to market. The development environment aids advanced application code development and debug, such as:
Create, compile, assemble, and link application programs written in C++, C, and assembly
Load, run, step, halt, and set breakpoints in application programs
Read and write data and program memory
Read and write core and peripheral registers
When used without the EV-SOMCRR-EZKIT carrier board, the EV-21569-SOM board requires an external in-circuit emulator (ICE-1000 or ICE-2000) be connected to the JTAG header.
