The HMC306AMS10 & HMC306AMS10E are general purpose broadband 5-bit positive control GaAs IC digital attenuators in 10 lead MSOP surface mount plastic packages. Covering 0.7 to 3.8 GHz, the insertion loss is typically less than 1.5 to 2.3 dB. These attenuators? bit values are 0.5 (LSB), 1, 2, 4 and 8 dB for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ? 0.2 dB typical with an IIP3 of up to +52 dBm. Five bit control voltage inputs, toggled between 0 and +3 to +5V, are used to select each attenuation state. A single Vdd bias of +3 to +5V applied through an external 5K Ohm resistor is required.APPLICATIONS Cellular; UMTS/3G Infrastructure? ISM, MMDS, WLAN, WiMAX? Microwave Radio & VSAT? Test Equipment and Sensors

The HMC321ALP4E is a broadband nonreflective GaAs SP8T switch in low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three. The switch operates using a positive control voltage of 0/+5 volts, and requires a fixed bias of +5 volts. This switch is suitable for usage in 50-Ohm or 75-Ohm systems.ApplicationsThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz

The HMC346ALP3E is an absorptive Voltage Variable Attenuator (VVA) in low cost leadless surface mount plastic package operating from DC - 14 GHz. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -5V. The device is ideal in designs where an analog DC control signal must control RF signal levels over a 30 dB amplitude range.Applications Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation

The HMC392ALC4 is a GaAs MMIC Low NoiseAmplifier which operates between 3.5 and 8.0GHz. Housed in a leadless 4x4 mm SMT package,this amplifier provides 17 dB of gain, 1.8 dB noisefigure and 34.5 dBm IP3 from a +5V supply voltage.HMC392ALC4 functions well as a low noise front endor as a driver amplifier. The RF Input and Output pinsare DC blocked and matched to 50 Ohms for easeof use. The HMC392ALC4 allows the use of surfacemount manufacturing techniques and is suitablefor high reliability military, industrial and spaceapplications.Applications Point-to-point radios VSAT LO driver for HMC mixers Military EW, ECM, C3I Space

The HMC412BMS8GE is a passive double-balancedmixer that operates from 8 to 16 GHz. TheHMC412BMS8GE operates with LO drive levelsbetween 9 to 15 dBm and provides 8 dB of conversionloss across the entire specified frequency band. Thismixer requires no external components or bias.Applications Long Haul Radio Platforms Microwave Radio VSAT

The HMC424ALH5 is a broadband 6-bit GaAs MMIC digital attenuator housed in a hermetic SMT leadless package. Covering DC to 13 GHz, the insertion loss is less than 3.5 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.5 dB typical step error with an IIP3 of +34 dBm. Six control voltage inputs, toggled between 0 and -5V, are used to select each attenuation state. A single Vee bias of -5V allows operation at frequencies down to DC. The HMC424ALH5 is compatible with standard and lead free surface mount manufacturing techniques and is suitable for high reliability military, industrial and space applications.Applications Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation

The HMC424ALP3E is a broadband, 6-bit, gallium arsenide (GaAs), digital attenuator in low cost, leadless surface-mount package with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC424ALP3E offers excellent attenuation accuracy of ?(0.2 dB + 4% of attenuation state) and high input linearity with a typical insertion loss of less than 4 dB over the specified frequency range from 0.1 GHz to 13.0 GHz. The attenuator bit values are 0.5 dB (LSB), 1 dB, 2 dB, 4 dB, 8 dB, and 16 dB for a total attenuation of 31.5 dB with a ?0.5 dB typical step error.The device allows a user to program the attenuation state via six parallel control inputs toggled between 0 V and VEE.The HMC424ALP3E operates with a single negative supply voltage from ?3 V to ?5 V, and requires an external level shifter to interface with a CMOS/transistor to transistor logic (TTL) interface.The HMC424ALP3E comes in a RoHS compliant, compact, 3 mm ? 3 mm, 16-lead lead frame chip scale package (LFCSP).Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors Intermediate frequency (IF) and RF designs Military and space

The HMC468ALP3E is a broadband 3-bit GaAs IC digital attenuators in a low cost leadless surface mount package. Covering DC to 6.0 GHz, the insertion loss is less than 1 dB typical up to 4 GHz. The attenuator bit values are 1 (LSB), 2 and 4 dB for a total attenuation of 7 dB. Attenuation accuracy is excellent at ?0.4 dB typical step error with an IIP3 of +55 dBm. Three control voltage inputs, toggled between 0 and +5V, are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONS Cellular; UMTS/3G Infrastructure? Fixed Wireless & WLL? Microwave Radio & VSAT? Test Equipment

The HMC525ALC4 is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband (SSB) upconverter. The mixer uses two standard double balanced mixer cells and a 90? hybrid fabricated in a GaAs, metalsemiconductor field effect transistor (MESFET) process. The HMC525ALC4 is a much smaller alternative to a hybrid style image reject mixer and a SSB upconverter assembly. The HMC525ALC4 eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques. Applications Microwave and very small aperture terminal radios Test equipment Point to point radios Military electronic warfare; electronic countermeasure; and command, control, communications, and intelligence

The HMC554ALC3B is a general-purpose, double balanced mixer in a leadless RoHS compliant leadless chip carrier (LCC) package that can be used as an upconverter or downconverter between 10 GHz and 20 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external?components or matching circuitry. The HMC554ALC3B provides excellent local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC554ALC3B eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Military electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications and intelligence (C3I)

The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DCand 40 GHz. The amplifier provides 11.5 dB of gain,29 dBm output IP3 and +24 dBm of output power at1 dB gain compression while requiring 175 mA froma +10 V supply. The HMC5805ALS6 is ideal for EW,ECM, Radar and test equipment applications. TheHMC5805ALS6 amplifier I/Os are internally matchedto 50 Ohms and the 6x6 mm SMT package is wellsuited for automated assembly techniques.Applications Test instrumentation Microwave radio and VSAT Military and space Telecom infrastructure Fiber optics

The HMC6147ALC5A is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with 25 dBc of sideband rejection. The HMC6147ALC5A utilizes a low noise amplifier to drive the I/Q mixer where the LO is driven by a X2 multiplier. IF1 and IF2 mixer inputs are provided and an external 90? hybrid is needed to select the required sideband.The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC 6147ALC5A is a much smaller alternative to hybrid style single sideband converter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.Applications Point-to-Point & Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors??

The HMC647ALP6E is a 6-bit digital phase shifter which is rated from 2.5 to 3.1 GHz, providing 360 degrees of phase coverage, with a LSB of 5.625 degrees. The HMC647ALP6E features very low RMS phase error of 1.5 degrees and extremely low insertion loss variation of ?0.4 dB across all phase states. This high accuracy phase shifter is controlled with positive control logic of 0/+5V The HMC647ALP6E is housed in a compact 6x6 mm plastic leadless SMT package and is internally matched to 50 Ohms with no external components.APPLICATIONS EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation

The HMC6505A is a compact gallium arsenide (GaAs),pseudomorphic (pHEMT), monolithic microwave integratedcircuit (MMIC) upconverter in a RoHS compliant package thatoperates from 5.5 GHz to 8.6 GHz. This device provides a smallsignal conversion gain of 15 dB with 22 dBc of sidebandrejection. The HMC6505A uses a variable gain amplifier (VGA)preceded by an in-phase and quadrature (I/Q) mixer that isdriven by an active local oscillator (LO). The IF1 and IF2 mixerinputs are provided, and an external 90? hybrid is needed toselect the required sideband. The I/Q mixer topology reducesthe need for filtering of unwanted sideband. The HMC6505Ais a smaller alternative to hybrid style single sideband (SSB)upconverter assemblies, and it eliminates the need for wirebonding by allowing the use of surface-mount manufacturingtechniques.The HMC6505A is available in 5 mm ? 5 mm, 32-terminalleadless chip carrier (LCC) package and operates over a ?40?Cto +85?C temperature range. An evaluation board for theHMC6505A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors

The HMC784AMS8GE is a high power SPDT switch inan 8-lead MSOPG package for use in transmit-receiveapplications which require very low distortion athigh input signal power levels. The device can controlsignals from DC to 4 GHz. The design providesexceptional intermodulation performance; > +60 dBmthird order intercept at +5V bias. RF1 and RF2 arereflective shorts when ?OFF?. On-chip circuitry allowssingle positive supply operation from +3 Vdc to +8 Vdcat very low DC current with control inputs compatiblewith CMOS logic families.Applications Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment

The HMC798ALC4 is a 24 GHz to 34 GHz subharmonically pumped (?2) MMIC mixer with an integrated LO amplifier housed in a leadless, RoHS compliant LCC package. The HMC798ALC4 can be used as an upconverter or downconverter between 24 GHz and 34 GHz. The 2 ? LO to radio frequency (RF) isolation is typically 30 dB in a 24 GHz to 30 GHz frequency range and 36 dB in a 30 GHz to 34 GHz frequency range, eliminating the need for additional filtering. The LO amplifier is single bias at a 5 V dc with a typical 4 dBm LO drive level requirement The HMC798ALC4 eliminates the need for wire bonding, allowing use of surface-mount technology (SMT) manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Point to point radios Satellite communications (SATCOM) Military electronic warfare (EW), electronic countermeasure (ECM), and command, control, communications and intelligence (C3I)

The HMC812ALC4 is an absorptive Voltage Variable Attenuator (VVA) which operates from 5 - 30 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 30 dB amplitude range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the 1st attenuation stage from -5V to 0V with Vctrl2 fixed at -5V. The control voltage of the 2nd attenuation stage, Vctrl2, should then be varied from -5V to 0V, with Vctrl1 fixed at 0V. The HMC812ALC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package.Furthermore, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point-to-point and VSAT radios.Applications Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar

The HMC815B is a compact gallium arsenide (GaAs),pseudomorphic high electron mobility transistor (pHEMT),monolithic microwave integrated circuit (MMIC) upconverterin a RoHS compliant package that operates from 21 GHz to27 GHz. This device provides a small signal conversion gain of12 dB and a sideband rejection of 20 dBc. The HMC815Butilizes a driver amplifier proceeded by an in phase/quadrature(I/Q) mixer where the LO is driven by an active 2? multiplier.IF1 and IF2 mixer inputs are provided, and an external 90?hybrid is needed to select the required sideband. The I/Q mixertopology reduces the need for filtering of unwanted sideband.The HMC815B is a smaller alternative to hybrid style singlesideband (SSB) downconverter assemblies, and it eliminates theneed for wire bonding by allowing the use of surface-mountmanufacturing techniques.The HMC815B is available in 4.90 mm ? 4.90 mm, 32-terminalceramic LCC package and operates over the ?40?C to +85?Ctemperature range. An evaluation board for the HMC815B isalso available upon request.Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 ?, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8410 is housed in a RoHS-compliant, 2 mm ? 2 mm, LFCSP package.Multifunction pin names can be referenced by their relevant function only.APPLICATIONS Software defined radios Electronics warfare Radar applications

The HMC849ALP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an 'all off' state.APPLICATIONS Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment