DC987B-F: Demo Board for the LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz.

DC988A-A: Demo Board for LT3585 Photoflash Charger with Adjustable Input Current and IGBT Driver

DC991A: Demo Board for the LT5560 0.01MHz to 4GHz Low Power Active Mixer.

The HMC369LP3(E) is an active miniature x2 frequency multiplier utilizing InGaP GaAs HBT technology in a 3x3 mm leadless QFN surface mount package. Power output is +4 dBm typical from a single +5V supply and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is 30 dBc typical with respect to output signal level.The low additive SSB phase noise of -142 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC369LP3(E) is ideal for use in LO multiplier chains allowing reduced parts count versus traditional approaches. The HMC369LP3(E) is also useful for OC-192 clock recovery. The application of 10 GBPS data to the input generates a -7 dBm clock tone at the output with spurious signals suppressed by 25 dB.APPLICATIONS OC-192 Clock Recovery Microwave Radio & VSAT Military Radios, Radar & ECM Test Instrumentation

The HMC454ST89(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1?2 watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89(E) an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC586LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +18V. The HMC586LC4B VCO operates from a single +5V supply, consumes only 55 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC587LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +18 volts. The HMC587LC4B VCO operates from a single +5V supply, consumes only 55 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC733LC4B is a wideband MMIC Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +22V. The HMC733LC4B VCO operates from a single +5V supply, consumes only 70 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.Applications CDMA & W-CDMA? GSM, GPRS & Edge? Base Stations & Repeaters

The HMC508LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC508LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +15 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC514LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC514LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio Test Equipment & Industrial Controls Military End-Use

The HMC530LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC583LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC583LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC571LC5 is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 9 dB with a noise figure of 3.5 dB and 18 dB of image rejection across the frequency band. The HMC571LC5 utilizes an LNA followed by an image reject mixer which is driven by an active x2 multiplier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency.I and Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC571LC5 is a much smaller alternative to hybrid style image reject mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.APPLICATIONS Point-to-Point Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications

The HMC600LP4(E) Logarithmic Detector/Controller converts RF signals at its input, to a proportional DC voltage at its output. The HMC600LP4(E) employs a successive compression topology which delivers extremely high dynamic range and conversion accuracy over a wide input frequency range. As the input power is increased, successive amplifiers move into saturation one by one creating an accurate approximation of the logarithm function.The output of a series of square law detectors is summed, converted into voltage domain and buffered to drive the LOGOUT output. For detection mode, the LOGOUT pin is shorted to the VSET input, and will provide a nominal logarithmic slope of 19mV/dB and an intercept of -95 dBm. The HMC600LP4(E) can also be used in the controller mode where an external voltage is applied to the VSET pin, to create an AGC or APC feedback loop.Applications Cellular/PCS/3G WiMAX, WiBro & Fixed Wireless Power Monitoring & Control Circuitry Receiver Signal Strength Indication (RSSI) Automatic Gain & Power Control

The HMC630LP3 & HMC630LP3E are high dynamic range Vector Modulator RFICs which are targeted for RF predistortion and feed-forward cancellation circuits, as well as RF beam forming and amplitude/ phase correction circuits. The I & Q ports of the HMC630LP3(E) can be used to continuously vary the phase and amplitude of RF signals by up to 360 degrees and 40 dB respectively, while supporting a 3 dB modulation bandwidth of 180 MHz. With an output IP3 of +24.5 dBm and output noise floor of -162 dBm/Hz (at maximum gain setting), the output IP3/ noise floor ratio is 186.5 dB.APPLICATIONS Wireless Infrastructure HPA & MCPA Error Correction Pre-Distortion or Feed-Forward Linearization Cellular/3G Systems Beam Forming or RF Cancellation Circuits