The HMC480ST89(E) is a InGaP HBT Gain Block MMIC SMT amplifiers covering DC to 5 GHz and packaged in an industry standard SOT89. The amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications.?The HMC480ST89(E) offers 19 dB of gain with a +34 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply.?The HMC480ST89(E) InGaP gain blocks offer excellent output IP3 and flat +19 to +20dBm output power performance through 5 GHz compared to equivalent SiGe based products.Applications Cellular / PCS / 3G? Fixed Wireless & WLAN? CATV, Cable Modem & DBS? Microwave Radio & Test Equipment

The HMC732LC4B is a wideband GaAs InGaP HBT MMIC Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator's monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +23V. The HMC732LC4B VCO operates from a single +5V supply, consumes only 57 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC511LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC511LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +13 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC513LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC513LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by- 4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC529LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC529LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +8 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC531LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC531LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +7 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.?APPLICATIONS VSAT Radio Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls Military End-Use

The HMC735 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735 integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +17 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC739 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC739 integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCOs phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +8 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios/LMDS VSAT

The HMC575LP4(E) is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS compliant SMT package. When driven by a 3 dBm signal, the multiplier provides +17 dBm typical output power from 6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc with respect to output signal level.This frequency multiplier features DC blocked I/O?s, and is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -140 dBc/Hz at 100 kHz offset helps maintain good system noise performance. The HMC575LP4(E) is compatible with surface mount manufacturing techniques.APPLICATIONS Wireless Local Loop Point-to-Point & VSAT Radios Test Instrumentation Military & Space

The HMC382LP3 & HMC382LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +30 dBm output IP3 from a single supply of +5V. The HMC382LP3 & HMC382LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC618LP3(E).Applications Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA GSM/GPRS & EDGE