Description

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz. The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ?33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ?20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers. The HMC8412 also features inputs and outputs that are internally matched to 50 ?, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. The HMC8412 is housed in an RoHS-compliant, 2 mm ? 2 mm, 6-lead LFCSP.APPLICATIONS Test instrumentation Telecommunications Military radar and communication Electronic warfare Aerospace

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Part number: EV1HMC8412LP2F

More details from Analog Devices Inc.