Dual Ideal Diode and Single Hot Swap Controller Features: Power Path and Inrush Current Control for Redundant Supplies Low Loss Replacement for Power Schottky Diodes Allows Safe Hot Swapping from a Live Backplane 2.9V to 18V Operating Range Controls N-Channel MOSFETs Limits Peak Fault Current in ≤1μs 0.5μs Ideal Diode Turn-On and Reverse Turn-Off Time Adjustable Current Limit with Circuit Breaker Smooth Switchover without Oscillation Adjustable Current Limit Fault Delay Fault and Power Status Output 20-Lead 4mm × 5mm QFN and 16-Lead SSOP Packages

Dual Ideal Diode and Single Hot Swap Controller Features: Power Path and Inrush Current Control for Redundant Supplies Low Loss Replacement for Power Schottky Diodes Allows Safe Hot Swapping from a Live Backplane 2.9V to 18V Operating Range Controls N-Channel MOSFETs Limits Peak Fault Current in ≤1μs 0.5μs Ideal Diode Turn-On and Reverse Turn-Off Time Adjustable Current Limit with Circuit Breaker Smooth Switchover without Oscillation Adjustable Current Limit Fault Delay Fault and Power Status Output 20-Lead 4mm × 5mm QFN and 16-Lead SSOP Packages

Dual Ideal Diode and Single Hot Swap Controller Features: Power Path and Inrush Current Control for Redundant Supplies Low Loss Replacement for Power Schottky Diodes Allows Safe Hot Swapping from a Live Backplane 2.9V to 18V Operating Range Controls N-Channel MOSFETs Limits Peak Fault Current in ≤1μs 0.5μs Ideal Diode Turn-On and Reverse Turn-Off Time Adjustable Current Limit with Circuit Breaker Smooth Switchover without Oscillation Adjustable Current Limit Fault Delay Fault and Power Status Output 20-Lead 4mm × 5mm QFN and 16-Lead SSOP Packages

UltraFast 7ns Response Time 15GHz RF Power Detector with Comparator Features: Temperature Compensated Schottky RF Peak Detector Wide Input Frequency Range: 600MHz to 15GHz† Wide Input Power Range: –24dBm to 16dBm 7ns Typical Response Time 75MHz Demodulation Bandwidth Programmable Gain Settings for Improved Sensitivity Adjustable Amplifier Output Offset Voltage High Speed Comparator with Latch Enable: 9ns Typical Response Time 16-Lead 3mm × 3mm QFN Package Temperature Range: –40°C to 125°C†Higher frequency operation is achievable with reduced performance. Consult the factory formore information.

20V High Efficiency Nanopower Step-Down Regulator Features: 720nA Input IQ in Regulation (No Load), VIN = 4V 820nA Input IQ in Regulation (No Load), VIN = 20V 400nA Input IQ in UVLO 2.7V to 20V Input Operating Range Up to 50mA of Output Current Pin Selectable Output Voltages: 1.2V, 1.5V, 1.8V, 2.5V (LTC3388-1) 2.8V, 3.0V, 3.3V, 5.0V (LTC3388-3) High Efficiency Hysteretic Synchronous DC/DC Conversion Standby Mode Disables Buck Switching Available in 10-Lead MSE and 3mm × 3mm DFN Packages

Low Noise Amplifier SMT, 350 - 550 MHz Features: Noise Figure: ≤1 dB Output IP3: +38 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temp Single Supply: +5V @ 104 mA 50 Ohm Matched Output

Medium Power Amplifier SMT, 17.5 - 25.5 GHz Features: Gain: 13 dB Saturated Power: +23 dBm @ 26% PAE Supply Voltage: +5V 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz Features: Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm²

0 Hz/DC to 34 GHz, SPDT MEMS Switches Features: ADGM1001: DC to 34 GHz Insertion loss 0.8 dB (typical) at 18 GHz 1.5 dB (typical) at 34 GHz IIP3: 76 dBm (typical) Maximum RF power: 33 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 200 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 16 GHz, SPDT MEMS Switches Features: ADGM1003: DC to 16 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.7 dB (typical) at 16 GHz Maximum RF power: 27 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 75 mA Actuation lifetime: 100 million cycles (Typical) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 16 GHz, SPDT MEMS Switches Features: ADGM1003: DC to 16 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.7 dB (typical) at 16 GHz Maximum RF power: 27 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 75 mA Actuation lifetime: 100 million cycles (Typical) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

Robust, Industrial, Low Power 10BASE-T1L Ethernet PHY Features: 10BASE-T1L IEEE Standard 802.3cg-2019 compliant Supports 1.0 V p-p and 2.4 V p-p transmit levels Supports intrinsic safety applications Cable Reach 1700 meters with 1.0 V p-p 1700 meters with 2.4 V p-p Low power consumption Single supply 1 V p-p: 45 mW typical Dual supply 1 V pk-pk: 39 mW typical Diagnostics Frame generator and checker Multiple loopback modes IEEE test mode support Link and cable diagnostics MII, RMII and RGMII MAC interfaces MDIO Management Interface Single or dual supply with 1.8 V or 3.3 V operation Unmanaged configuration using pin strapping including 25 MHz crystal or external clock input (50 MHz for RMII) 3.3 V, 2.5 V, or1.8 V MAC interface VDDIO supply Integrated power supply monitoring and POR EMC test standards IEC 61000-4-4 EFT (±4 kV) IEC 61000-4-2 ESD (±4 kV contact discharge) IEC 61000-4-2 ESD (±8 kV air discharge) IEC 61000-4-5 surge (±4 kV) IEC 61000-4-6 conducted immunity (10 V/m) IEC 61000-4-3 radiated immunity (Class A) EN 55032 radiated emissions (Class B) Small package 40-lead (6 mm x 6 mm) LFCSP Temperature range Industrial: -40°C to +85°C Extended:-40°C to +105°C

Robust, Industrial, Low Latency and Low Power 10 Mbps, 100 Mbps, and 1 Gbps Ethernet PHY Features: 10BASE-Te/100BASE-TX/1000BASE-T IEEE® 802.3™ compliant MII, RMII, and RGMII MAC interfaces 1000BASE-T RGMII latency transmit < 68 ns, receive < 226 ns 100BASE-TX MII latency transmit< 52 ns, receive < 248 ns EMC test standards IEC 61000-4-5 surge (±4 kV) IEC 61000-4-4 electrical fast transient (EFT) (±4 kV) IEC 61000-4-2 ESD (±6 kV contact discharge) IEC 61000-4-6 conducted immunity (10 V) EN55032 radiated emissions (Class A) EN55032 conducted emissions (Class A) Unmanaged configuration using multilevel pin strapping EEE in accordance with IEEE 802.3az Start of packet detection for IEEE 1588 time stamp support Enhanced link detection Configurable LED Crystal oscillator frequency/25 MHz clock input frequency (50 MHz for RMII) 25 MHz/125 MHz synchronous clock output Small package and wide temperature range 40-lead, 6 mm × 6 mm LFCSP Specified for −40°C to +105°C ambient operation Low power consumption 330 mW for 1000BASE-T 140 mW for 100BASE-TX 3.3 V/2.5 V/1.8 V MAC interface VDDIO supply Integrated power supply monitoring and POR

Low Complexity, 2-Port Ethernet Switch with Integrated 10BASE-T1L PHYs Features: 10BASE-T1L IEEE® Std 802.3cg-2019™ compliant Supports 1.0 V p-p & 2.4 V p-p transmit Levels Cable reach Up to 1700 meters with 1.0 V p-p transmit level Up to 1700 meters with 2.4 V p-p transmit level Low power consumption Low power consumption - single supply 80 mW typ Dual supply 1.0 V p-p: 77 mW typical Integrated switch with SPI interface 10 Mbps full duplex 16 MAC addresses supported for frame forwarding Supports OPEN Alliance 10BASE-T1x MACPHY SPI MDIO memory map accessible via SPI Supports high & low priority queues Total buffer memory of 28 kB shared between ports and host Autonegotiation capability Managed or unmanaged configuration Cut through or store and forward operation IEEE 1588 time stamp capture on transmit and receive Diagnostics Frame generator and checker Multiple loopback modes IEEE test mode support Port dedicated statistics counters Link and cable diagnostics 25 MHz crystal or external clock input Single or dual supply with 1.8 V or 3.3 V operation Integrated power supply monitoring and POR Small package: 48-lead, 7 mm × 7 mm LFCSP Temperature range Industrial: 40°C to +85°C Extended: 40°C to +105°C

Precision MEMS IMU Module Features: Triaxial, digital gyroscope  ±125°/sec, ±500°/sec, ±2000°/sec dynamic range models 2°/hr in-run bias stability (ADIS16465-1)  0.15°/√hr angular random walk (ADIS16465-1 and ADIS16465-2)  ±0.05° axis to axis misalignment error  Triaxial, digital accelerometer, ±8 g 3.6 μg in-run bias stability Triaxial, delta angle, and delta velocity outputs Factory calibrated sensitivity, bias, and axial alignment Calibration temperature range: −40°C to +85°C   SPI-compatible data communications Programmable operation and control  Automatic and manual bias correction controls Data ready indicator for synchronous data acquisition External sync modes: direct, pulse, scaled, and output On demand self test of inertial sensors On demand self test of flash memory Single-supply operation (VDD): 3.0 V to 3.6 V 2000 g mechanical shock survivability Operating temperature range: −40°C to +105°C

Precision, Miniature MEMS IMU Features: Triaxial, digital gyroscope ±125°/sec, ±500°/sec, ±2000°/sec dynamic range models 2.3°/hr in-run bias stability (ADIS16507-1) 0.13°/√hr angular random walk, x-axis and y-axis, 1 σ (ADIS16507-1) ±0.25° axis to axis misalignment error Triaxial, digital accelerometer, ±392 m/sec2 dynamic range 125 μm/sec2 in-run bias stability, x-axis and y-axis, 1 σ Triaxial, delta angle and delta velocity outputs Factory calibrated sensitivity, bias, and axial alignment Calibration temperature range: −40°C to +85°C SPI compatible data communications Programmable operation and control Automatic and manual bias correction controls Data ready indicator for synchronous data acquisition External sync modes: direct, scaled, and output On demand self-test of inertial sensors On demand self-test of flash memory Single-supply operation (VDD): 3.0 V to 3.6 V 19,600 m/sec2 mechanical shock survivability Operating temperature range: −40°C to +105°C

21.2 GHz to 23.6 GHz, Low Noise Amplifier Features: Frequency range: 21.2 GHz to 23.6 GHz Typical gain of >22.5 dB Low noise input Noise figure 3.3 dB typical at 21.2 GHz 3.4 dB typical at 23.6 GHz High linearity input ≥1.0 dBm typical input third-order intercept (IIP3) −8 dBm input 1 dB compression point (P1dB) at 23.6 GHz Matched 50 Ω single-ended input Matched 100 Ω differential outputs 8-lead, 2.00 mm × 2.00 mm LFCSP microwave packaging

High Voltage Input Protection Device Features: Controls supply voltages from 4 V to 60 V Gate drive for low voltage drop reverse supply protection Gate drive for P-channel FETs Inrush current limiting control Adjustable current limit Foldback current limiting Automatic retry or latch-off on current fault Programmable current-limit timer for safe operating area (SOA) Power-good and fault outputs Analog undervoltage (UV) and overvoltage (OV) protection 16-lead, 3 mm × 3 mm LFCSP 16-lead QSOP

High Voltage Input Protection Device Features: Controls supply voltages from 4 V to 60 V Gate drive for low voltage drop reverse supply protection Gate drive for P-channel FETs Inrush current limiting control Adjustable current limit Foldback current limiting Automatic retry or latch-off on current fault Programmable current-limit timer for safe operating area (SOA) Power-good and fault outputs Analog undervoltage (UV) and overvoltage (OV) protection 16-lead, 3 mm × 3 mm LFCSP 16-lead QSOP

High Voltage Input Protection Device Features: Controls supply voltages from 4 V to 60 V Gate drive for low voltage drop reverse supply protection Gate drive for P-channel FETs Inrush current limiting control Adjustable current limit Foldback current limiting Automatic retry or latch-off on current fault Programmable current-limit timer for safe operating area (SOA) Power-good and fault outputs Analog undervoltage (UV) and overvoltage (OV) protection 16-lead, 3 mm × 3 mm LFCSP 16-lead QSOP