Description

The HMC737 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737 integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use