Description

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure  Test and measurement equipment