Rectifiers 8A,600V, GLASS PASSIVATED HIGH EFFICIENT SINGLE RECTIFIER, ISOLATED

Taiwan Semi MBR10150 C0 Schottky Diode, 150V 10A, 2-Pin TO-220AC. Diode Configuration: Single. Mounting Type: Through Hole. Length: 10.5mm. Width: 4.7mm. Height: 8.24mm. Minimum Operating Temperature: -65 °C. Peak Non-Repetitive Forward Surge Current: 150A. Dimensions: 8.24 x 10.5 x 4.7mm., Taiwan Semiconductor

Taiwan Semiconductor GBPC2510 T0, Bridge Rectifier, 25A 1000V, 4-Pin GBPC. Bridge Type: Single Phase. Mounting Type: Screw Mount. Diode Technology: Silicon Junction. Configuration: Single. Peak Non-Repetitive Forward Surge Current: 300A. Maximum Operating Temperature: +150 °C. Minimum Operating Temperature: -50 °C. Peak Forward Voltage: 1.1V. Peak Reverse Current: 5µA. Length: 29mm. Width: 29mm.

Taiwan Semi MBR30100CT C0 Dual Schottky Diode, Common Cathode, 100V 30A, 3-Pin TO-220AB. Mounting Type: Through Hole. Length: 10.5mm. Width: 4.7mm. Height: 8.24mm. Maximum Operating Temperature: +150 °C. Peak Non-Repetitive Forward Surge Current: 200A. Minimum Operating Temperature: -65 °C., Taiwan Semiconductor

Taiwan Semi RS1KL R3 SMT Fast Recovery Diode, 800V 800mA, 2-Pin Sub SMA. Diode Configuration: Single. Mounting Type: Surface Mount. Diode Technology: Silicon Junction. Diode Type: Silicon Junction. Maximum Forward Voltage Drop: 1.3V. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Recovery Time: 500ns., Taiwan Semiconductor

Taiwan Semi S1G R2 SMT Switching Diode, 400V 1A, 2-Pin DO-214AC. Diode Configuration: Single. Mounting Type: Surface Mount. Package Type: DO-214AC (SMA). Diode Technology: Silicon Junction. Diode Type: Silicon Junction. Maximum Forward Voltage Drop: 1.1V. Length: 4.6mm. Width: 2.83mm. Height: 2.3mm. Peak Reverse Recovery Time: 1.5µs., Taiwan Semiconductor

Taiwan Semi BAT54A RF Dual SMT Schottky Diode, Common Anode, 30V 200mA, 3-Pin SOT-23. Mounting Type: Surface Mount. Length: 3.05mm. Width: 1.4mm. Height: 0.95mm. Peak Reverse Recovery Time: 5ns. Dimensions: 0.95 x 3.05 x 1.4mm. Peak Reverse Current: 2µA., Taiwan Semiconductor

Taiwan Semi RSFJL R3 SMT Fast Recovery Diode, 600V 500mA, 2-Pin Sub SMA. Diode Configuration: Single. Number of Elements per Chip: 1. Mounting Type: Surface Mount. Diode Technology: Silicon Junction. Diode Type: Silicon Junction. Maximum Forward Voltage Drop: 1.3V. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Recovery Time: 250ns., Taiwan Semiconductor

Taiwan Semi SS110L R3 SMT Schottky Diode, 100V 1A, 2-Pin Sub SMA. Diode Configuration: Single. Mounting Type: Surface Mount. Maximum Forward Voltage Drop: 800mV. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Dimensions: 2.9 x 1.9 x 1.43mm. Peak Non-Repetitive Forward Surge Current: 30A., Taiwan Semiconductor

Taiwan Semi RS1ML R3 SMT Fast Recovery Diode, 1000V 800mA, 2-Pin Sub SMA. Diode Configuration: Single. Mounting Type: Surface Mount. Diode Type: Silicon Junction. Diode Technology: Silicon Junction. Maximum Forward Voltage Drop: 1.3V. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Recovery Time: 500ns., Taiwan Semiconductor

Taiwan Semi BAT54 RF SMT Schottky Diode, 30V 200mA, 3-Pin SOT-23. Diode Configuration: Single. Number of Elements per Chip: 1. Mounting Type: Surface Mount. Length: 3.05mm. Width: 1.4mm. Height: 0.95mm. Peak Reverse Recovery Time: 5ns. Maximum Operating Temperature: +150 °C. Dimensions: 0.95 x 3.05 x 1.4mm., Taiwan Semiconductor

Taiwan Semi SS13 R3 SMT Schottky Diode, 30V 1A, 2-Pin DO-214AC. Diode Configuration: Single. Mounting Type: Surface Mount. Package Type: DO-214AC (SMA). Length: 4.6mm. Width: 2.83mm. Height: 2.3mm. Peak Non-Repetitive Forward Surge Current: 30A. Peak Reverse Current: 400µA. Dimensions: 2.3 x 4.6 x 2.83mm., Taiwan Semiconductor

Taiwan Semi RSFKL R3 SMT Fast Recovery Diode, 800V 500mA, 2-Pin Sub SMA. Diode Configuration: Single. Number of Elements per Chip: 1. Mounting Type: Surface Mount. Diode Technology: Silicon Junction. Diode Type: Silicon Junction. Maximum Forward Voltage Drop: 1.3V. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Recovery Time: 500ns., Taiwan Semiconductor

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