11-kW: bidirectional: three-phase ANPC based on GaN reference design
Description
This reference design provides a design template for implementing a three-level: three-phase: silicon carbide/gallium nitride (SiC/GaN) based ANPC inverter power stage. The use of fast-switching power devices makes it possible to switch at a higher frequency of 100 kHz: reducing the size of magnetics for the filter and increasing the power density of the power stage. The multilevel topology allows the use of 600-V rated power devices at higher DC bus voltages of up to 1000 V. The lower switching voltage stress reduces switching losses resulting in a peak efficiency of 98.5%. This design is modular in construction: making it configurable to work with SiC or GaN power devices with the same filter stage.
Features
- Three-level power stage for three-phase inverters/PFCs using 650-V rated SiC/GaN switches in a 800-V systemNovel on-board protection implemented using CLB of C2000 to get real-time safety operation with no extra costOptimized control scheme needs only 6 PWMs from MCU vs. 9 PWMs for standard implementationShunt-based current sense implemented for high accuracy and linearity over temperatureHigh-power density due to high-switching frequency (100 kHz) and high efficiency
Applications
- String inverter
- Three phase UPS
- Fuel cell inverter
- DC fast charging station
- Power conversion system (PCS)
- DC fast charging power module
Product Categories
- C2000 real-time microcontrollers