Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters
Description
This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment: this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power: servers: and industrial power supplies.
Features
- Compact GaN-Based Power Stage Design With Switching up to 50 MHzIndependent PWM inputs for high side and low side: or single PWM input with adjustable dead timeMinimum pulse width of 3 nsHigh slew rate immunity of 300 V/nsDriver UVLO and overtermpertaure protection
Applications
- Baseband unit (BBU)
- Edge router
- Intra-DC interconnect (metro)
- Inter-DC interconnect (long-haul
- submarine)
- Core router
- Performance client
- High performance computing
- Microserver & tower server
- Active antenna system mMIMO (AAS)
- Indoor backhaul
- Campus & branch switches
- Cell site gateway router
- Multi-access edge computing (MEC)
- Data center switch
- Macro remote radio unit (RRU)
- Rack server motherboard
- Blade server
Product Categories
- Power management